Media junkies — and anybody else who has ever found themselves cursing their phone’s lack of storage — have reason to rejoice. Samsung has announced that it’s begun mass producing an industry first: three-dimensional Vertical NAND (3D V-NAND) flash memory. Translation? A whole lot more smartphone storage.
3D V-NAND, which “breaks through the current scaling limit for existing NAND flash technology,” involves stacking up multiple layers of 16 GB storage on top of one another to create a single chip with up to a whopping 384 GB of storage. The resulting the 3D V-NAND chip won’t result in thicker or bulkier phones that need to accommodate it either, as its thickness is supposedly not much greater than existing flash memory.
The first 3D V-NAND chip that Samsung is now mass producing has a capacity of 128 GB, but the company did not indicate a timeframe of when we can expect to see this technology in future smartphones. Similarly, the advent of this new technology raises questions about how (if at all) this well impact the overall price of the devices in which 3D V-NAND chips are featured, but we’ll just have to wait and see.